FBS-GAM02-P-R50

$729.30

Description：GAN 50V 10A HALF BRIDGE 18SMT
Series：eGaN®

SKU:515df9519234 Category: Power Driver Modules Brand: EPC Space, LLC

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Product introduction

Product Detailed Parameters

Description：GAN 50V 10A HALF BRIDGE 18SMT
Series：eGaN®
Mfr：EPC Space, LLC
Package：Bulk
Type：-
Configuration：-
Current：-
Voltage：-
Voltage - Isolation：-
Mounting Type：Surface Mount
Package / Case：18-SMD Module
Grade：-
Qualification：-

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FBS-GAM02-P-R50

Overview

The EPC Space FBS-GAM02-P-R50 is a radiation-hardened multifunctional power module designed for commercial satellite environments. It integrates two eGaN® output power HEMTs, two high-speed gate drive circuits, and two Schottky diode clamp elements with shoot-through prevention logic within an 18-pin SMT molded epoxy package. The device supports four configurations: single low-side, single high-side, independent drivers, or half-bridge drivers. It features internal power good monitoring and operates with a +5 VDC gate drive bias.

Feature Summary

Incorporates FDA10N30 eGaN® switching power HEMTs for high-speed operation up to 1.0 MHz
Provides integrated shoot-through protection and internal power good circuitry
Supports flexible topologies including half-bridge, single high-side, and single low-side configurations
Guaranteed radiation hardness with 100kRad TID rating and SEE immunity

Applications

Power switches and actuators in space systems
Single and multi-phase motor phase drivers
Point-of-load building blocks
High-speed DC-DC conversion

Procurement Notes

Verify the specific part number against official EPC Space documentation to ensure compliance with radiation hardness requirements. Confirm that the ordering suffix matches the intended configuration and screening level. Check datasheet notes regarding bootstrap capacitor requirements and logic input voltage limits when integrating with legacy controllers.

Selection Notes

Select this module for applications requiring radiation tolerance and compact form factors. Ensure the design accommodates the 18-pin SMT package and pillar I/O pads. Verify that the external logic signals comply with the specified input voltage ranges and that adequate dead time is implemented for half-bridge operations to prevent cross-conduction.

Part Context

This component belongs to the FBS-GAM02 series of radiation-hardened multifunctional power modules. It utilizes eGaN® technology to provide rugged performance in harsh environments. The design is patented and validated using wafer-by-wafer radiation hardness assurance methods to ensure reliability in space applications.