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The FBS-GAM04-P-C100 is a dual low-side power driver development module utilizing eGaN switching elements. It features two independent drivers capable of 10 A continuous drain current each, with fully de-rated operation at 100 VDC and component capability up to 200 V. The module integrates high-speed gate drive circuits, input shoot-through protection, and internal VBIAS overvoltage protection. It operates within a temperature range of -40°C to +85°C and supports switching frequencies up to 3.0 MHz.
Verify the specific commercial screening grade indicated by the C100 suffix against project requirements. Confirm that the 18-pin SMT package dimensions and pillar pin configuration match the PCB layout. Ensure application bypassing capacitors meet the specified voltage ratings to maintain performance.
Select this module for engineering brass-board development targeting the flight unit version. Evaluate thermal resistance characteristics for heat dissipation needs. Consider the open-drain output configuration and required external pull-up components for logic interfacing. Verify compatibility with 5 VDC gate drive bias supplies.
This component belongs to the FBS-GAM04-P Series, which serves as a development platform for the FBS-GAM04-P-R100 flight unit version. The series utilizes EPC Space's GaN Driving GaN Technology, incorporating eGaN switching elements for both power switches and gate drive circuits within a compact molded epoxy package.
Public confirmed substitute part numbers are not available.