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Product Detailed Parameters
- Description：NCH J-FET+BIP NPN
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The FC18G-TL is a dual semiconductor device from onsemi, integrating an N-channel J-FET and an NPN bipolar junction transistor (BJT) within a single package. This configuration allows for combined field-effect and bipolar switching or amplification capabilities in compact designs. The component is classified under discrete semiconductor products, specifically within the dual transistor array category. It serves as a monolithic solution for applications requiring both J-FET and BJT functionalities without the need for separate components.
Feature Summary
- Integrates an N-channel J-FET and an NPN BJT in a single package
- Provides dual functionality for combined switching and amplification needs
- Designed as a compact discrete semiconductor solution
Applications
- General-purpose dual switching circuits
- Amplifier stages requiring mixed FET and BJT characteristics
- Compact discrete logic or signal processing modules
Procurement Notes
Verify the specific package type and pinout configuration against your schematic before procurement, as datasheet details may vary by revision. Confirm that the integrated J-FET and BJT parameters meet your circuit requirements. Ensure compatibility with your manufacturing process regarding lead temperature limits and soldering profiles specified in the official documentation.
Selection Notes
Select this component when space constraints require combining J-FET and BJT functions into one footprint. Evaluate the electrical characteristics of both the integrated J-FET and NPN transistor to ensure they suit your specific voltage and current operating points. Consider thermal performance if high power dissipation is expected in either element.
Part Context
This part belongs to onsemi's portfolio of discrete semiconductor products, specifically categorized under dual transistor arrays. It represents a specialized hybrid solution offering both field-effect and bipolar transistor technologies in a unified component, distinct from standard single-type transistor packages.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Verify functional equivalence carefully if considering alternatives from other manufacturers.
