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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A D2PAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The FCB20N60TM is a single N-channel power MOSFET from onsemi's SuperFET™ series, housed in a TO-263 (D2PAK) surface-mount package. It features a 600V drain-source voltage rating and a continuous drain current of 20A at case temperature. The device exhibits a maximum on-resistance of 190mΩ at 10V gate drive and 10A current. Key electrical parameters include a maximum gate charge of 98nC at 10V, an input capacitance of 3080pF at 25V, and a maximum gate-source voltage of ±30V. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 208W.
Feature Summary
- Integrated SuperFET technology for optimized high-voltage performance
- Enhanced switching capabilities suitable for high-frequency applications
- Robust thermal design supporting high power dissipation
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure component authenticity by sourcing from authorized distributors and validating part markings against official marking guides.
Selection Notes
Select this component for designs requiring 600V blocking capability with moderate current handling. Evaluate thermal management requirements based on the 208W dissipation limit at case temperature. Consider the 190mΩ on-resistance for conduction loss calculations and verify gate drive voltage compatibility with the specified threshold and charge characteristics.
Part Context
This device belongs to the SuperFET family, which utilizes advanced trench gate and trench field-stop technologies. These technologies are engineered to reduce gate charge and improve switching efficiency compared to standard planar MOSFETs. The D2PAK package provides a balance between thermal performance and PCB space efficiency for medium-power applications.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference key parameters such as Vdss, Id, Rds(on), and package dimensions when evaluating alternative components.
