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Product Detailed Parameters
- Description：MOSFET N-CH 650V 12A D2PAK
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1010 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：90W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The FCB260N65S3 is an N-channel enhancement-mode MOSFET from onsemi's SuperFET III series, designed for high-voltage applications. It features a maximum drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 12 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 260 mΩ at 10 V gate drive. Packaged in a surface-mount TO-263 (D2PAK) housing with three pins, it supports a power dissipation of 90 W. Operating temperatures range from -55°C to 150°C junction temperature.
Feature Summary
- SuperFET III technology integration for optimized performance
- High breakdown voltage capability suitable for robust switching
- Surface-mount D2PAK package design for efficient thermal management
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm compliance with RoHS and REACH directives through the manufacturer's material declaration. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement decisions.
Selection Notes
Select this component when a 650 V rating and low on-resistance are required for high-efficiency switching. The TO-263 package facilitates direct board mounting with improved heat dissipation compared to through-hole options. Ensure gate drive voltages remain within the specified limits to maintain optimal Rds(on) performance and device reliability during operation.
Part Context
This part belongs to onsemi's SuperFET III family, which combines trench gate and field plate technologies. These devices are engineered to reduce conduction losses while maintaining fast switching speeds. The FCB260N65S3 specifically targets applications requiring high voltage isolation and reliable performance in compact power electronics designs.
Replacement Considerations
Direct substitutes include other SuperFET III parts such as FCB070N65S3 or NVB190N65S3F, provided pin compatibility and electrical ratings match the design requirements. Verify package dimensions and thermal characteristics to ensure seamless integration without PCB redesign.
