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Product Detailed Parameters
- Description：MOSFET N-CH 600V 3.9A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD4N60TM is a single N-channel enhancement mode MOSFET from onsemi’s SuperFET series, housed in a DPAK-3 (TO-252-3) surface-mount package. It features a 600 V drain-source breakdown voltage and a continuous drain current of 3.9 A. The device exhibits a maximum on-resistance of 1 Ohm at 10 V gate drive, with a typical gate charge of 16.6 nC. Electrical characteristics include a threshold voltage of 3 V, a power dissipation rating of 50 W, and an operating temperature range spanning -55 °C to +150 °C junction temperature.
Feature Summary
- Integrated SuperFET technology designed for high-efficiency switching applications
- Enhanced avalanche ruggedness for robust performance under transient stress
- Low gate charge characteristics facilitating efficient driver interface
Applications
- High-voltage DC-DC converter circuits
- Power factor correction stages
- Motor control systems
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging configuration and compliance status. Ensure the component matches the required thermal management specifications for the intended application environment. Cross-reference datasheet parameters with system requirements prior to integration.
Selection Notes
Select this component for designs requiring 600 V blocking capability with moderate current handling in a compact SMD footprint. Evaluate thermal resistance constraints given the 50 W dissipation rating in the TO-252 package. Compare gate charge values against available driver capabilities to optimize switching speed and minimize losses.
Part Context
This part belongs to the FCD4N60 family of high-voltage power MOSFETs manufactured by onsemi. The SuperFET line utilizes advanced process technologies to achieve improved figure-of-merit metrics compared to standard planar devices. These components are engineered for general-purpose power switching where reliability and efficiency are critical.
Replacement Considerations
Direct substitutes within the same family include FCD7N60TM and FCD9N60NTM, which offer higher current ratings and lower on-resistance while maintaining compatible pinouts and voltage specifications.
