FCD5N60-F085

$0.77

Description：FCD5N60_F085 - N-CHANNEL SUPERFE
Series：SuperFET™
Mfr：onsemi
Package：Bulk

SKU:6cb4f5c5a0b2 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：FCD5N60_F085 - N-CHANNEL SUPERFE
Series：SuperFET™
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.1Ohm @ 4.6A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：570 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：54W (Tj)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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FCD5N60-F085

Overview

The FCD5N60-F085 is an N-Channel SuperFET MOSFET manufactured by onsemi. It features a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 4.6 A at 25°C ambient temperature. The device has a maximum gate-to-source voltage (Vgs) rating of ±30 V and a threshold voltage (Vgs(th)) maximum of 3 V at 250 µA. Its on-resistance (Rds On) is specified as 3.2 Ohms at 16 A and 10 V, with a gate charge (Qg) of 16 nC. Power dissipation reaches 54 W, and it operates within a junction temperature range of -55°C to +150°C. The component is housed in a DPAK-3 (TO-252-3) surface-mount package.

Feature Summary

SuperFET technology integration for optimized switching performance
Automotive grade qualification compliant with AEC-Q101 standards
High-voltage capability suitable for robust power applications

Applications

Automotive power management systems
Industrial motor control circuits
DC-DC converter topologies

Procurement Notes

Verify the obsolete status and end-of-life designation before finalizing design-in decisions. Confirm that available substitute components meet all electrical specifications and package dimensions required for the target application. Ensure compliance with RoHS directives and REACH regulations during sourcing. Validate supplier authenticity through authorized distribution channels to prevent counterfeit risks.

Selection Notes

Select this component for high-voltage applications requiring automotive reliability and compact surface-mount packaging. Evaluate thermal management requirements given the 54 W power dissipation limit in the DPAK-3 package. Consider the trade-off between on-resistance and switching speed inherent to SuperFET technology. Ensure gate drive voltages remain within the ±30 V limit to maintain device integrity.

Part Context

This part belongs to onsemi's SuperFET family, which combines trench gate and field plate technologies to reduce specific on-resistance. The FCD5N60 variant targets high-voltage discrete semiconductor markets. The -F085 suffix typically denotes specific tape-and-reel packaging configurations used for automated assembly processes in manufacturing environments.