FCH099N60E

Overview

The FCH099N60E is a single N-channel power MOSFET from the onsemi SuperFET II family, designed for high-voltage applications. It features a 600V drain-source breakdown voltage and utilizes silicon technology in a TO-247-3 through-hole package. The device offers a maximum continuous drain current of 45.8A at 25°C case temperature and a typical on-resistance of 65mΩ at VGS=10V. With a power dissipation rating of 368W and an operating junction temperature range up to +150°C, it supports robust thermal management. The component includes a built-in body diode and is avalanche rated for enhanced reliability.

Feature Summary

• SuperFET II architecture providing low on-resistance and fast switching capabilities
• Integrated body diode with optimized reverse recovery characteristics
• Avalanche-rated construction ensuring robustness against transient energy events
• Through-hole TO-247-3 packaging for efficient heat dissipation

Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• DC-DC converter circuits

Procurement Notes

Verify the specific suffix 'NF' or other variants when sourcing, as they may indicate different testing or binning criteria. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the procurement channel provides genuine onsemi components to avoid counterfeit risks. Check for any end-of-life notices or recommended new replacements if available in official channels.

Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling in a through-hole format. Consider the thermal resistance values for heatsink sizing calculations. Evaluate the gate charge requirements against the driver capability to ensure optimal switching performance. Compare the on-resistance specifications with alternative packages if space constraints exist.

Part Context

This part belongs to the SuperFET II series, which employs charge-balanced superjunction technology. This technology allows for lower on-resistance compared to conventional planar MOSFETs of similar voltage ratings. The series is known for balancing conduction losses and switching losses, making it suitable for efficient power conversion applications.

Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains the same package type and thermal characteristics. Ensure the replacement meets the required avalanche energy ratings if used in inductive load switching scenarios.