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Product Detailed Parameters
- Description：MOSFET N-CH 600V 37A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Bulk,Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：104mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4165 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH104N60 is a single N-channel enhancement mode MOSFET from the SuperFET II series, manufactured by onsemi. It features a 600V drain-source voltage rating and a continuous drain current of 37A at case temperature. The device exhibits a maximum on-resistance of 104mΩ at 10V gate drive. It utilizes through-hole TO-220-3 packaging with a maximum power dissipation of 357W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance
- Features low on-resistance for efficient conduction
- Includes built-in body diode for inductive load handling
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- General-purpose switching applications
Procurement Notes
Verify the exact package configuration when ordering, as the FCH104N60 designation may correspond to different physical footprints such as TO-220 or TO-247 depending on the specific suffix or manufacturer revision. Confirm RoHS compliance status and check for recent Product Change Notifications regarding pinout or marking changes before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring robust high-voltage switching capabilities with moderate current demands. Ensure the thermal management solution supports the specified 357W dissipation limit at the target case temperature. Verify that the gate drive voltage aligns with the 10V threshold for optimal on-state resistance performance.
Part Context
This part belongs to the SuperFET II family of high-voltage MOSFETs designed for efficiency and reliability. The FCH104N60 represents a standard offering within this portfolio, providing a balance between voltage blocking capability and conduction losses suitable for general industrial electronics.
Replacement Considerations
Cross-reference with FCH104N60F for verified equivalent options. Note that Fairchild Semiconductor has been integrated into onsemi, which may affect naming conventions and documentation availability.
