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Product Detailed Parameters
- Description：MOSFET N-CH 600V 22A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：170mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2860 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：227W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH170N60 is an N-Channel Power MOSFET from onsemi’s SUPERFET II family, utilizing charge balance technology for outstanding low switching losses. It features a 600 V Drain-Source Breakdown Voltage (Vds) and a continuous Drain Current (Id) of 22 A at case temperature. The device exhibits a maximum Drain-Source On-Resistance (Rds(on)) of 170 mΩ at Vgs = 10 V. It operates with a Gate-Source Voltage range of ±20 V and has a power dissipation rating of 227 W. The component is housed in a TO-247-3 package and supports a maximum operating junction temperature of 150°C.
Feature Summary
- SUPERFET II architecture employing charge balance technology to minimize switching losses
- High-voltage capability suitable for robust industrial power applications
- Fast switching performance with low gate charge characteristics
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-DC converters
Procurement Notes
Verify the current lifecycle status before procurement, as distributor data indicates this specific part number may be scheduled for obsolescence or discontinuation by the manufacturer. Confirm availability through authorized channels and check for valid datasheet revisions. Ensure the required quantity aligns with end-of-life transition plans if applicable.
Selection Notes
Select this component for designs requiring 600 V blocking voltage and moderate current handling up to 22 A. The 170 mΩ Rds(on) offers a balance between conduction loss and cost. Ensure the thermal management solution can handle 227 W dissipation at the expected case temperature. Verify that the gate drive circuitry supports the specified ±20 V limit and fast switching speeds.
Part Context
This device belongs to onsemi’s SUPERFET II series, which leverages super-junction MOSFET technology. This family is designed to provide superior efficiency compared to traditional planar MOSFETs. The FCH170N60 specifically targets high-frequency power conversion applications where reduced switching losses are critical for system efficiency and thermal performance.
Replacement Considerations
Check for direct pin-compatible replacements within the SUPERFET II family or other 600 V N-Channel MOSFETs with similar Rds(on) and Id ratings. Verify that any substitute maintains the TO-247-3 package form factor and meets the same electrical specifications for Vds, Id, and thermal resistance.
