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Product Detailed Parameters
- Description：MOSFET N-CH 600V 11A I2PAK
- Series：SuperFET™
- Mfr：Fairchild Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262 (I2PAK)
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The FCI11N60 is an N-channel enhancement mode MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 11 A at case temperature. The device utilizes I2PAK packaging for through-hole installation. Key electrical parameters include a maximum on-resistance (Rds(on)) of 380 mΩ at Vgs = 10 V and Id = 5.5 A. The gate threshold voltage (Vgs(th)) is specified at a maximum of 5 V with Id = 250 µA. Maximum gate-source voltage limits are ±30 V. The component supports a maximum power dissipation of 125 W at the case and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- High-voltage capability with 600 V breakdown rating suitable for demanding power switching environments.
- Low on-state resistance optimized for conduction efficiency in high-current applications.
- Robust avalanche energy rating ensuring reliability under transient stress conditions.
Applications
- Power factor correction (PFC) circuits
- Switching power supply converters
- General-purpose inverters
Procurement Notes
Verify the manufacturer designation carefully, as Fairchild Semiconductor was acquired by onsemi. Ensure the specific ordering suffix matches the required package variant and lead-free status. Confirm that the datasheet version aligns with the production batch requirements for your design specifications.
Selection Notes
Select this component for designs requiring 600 V blocking voltage with moderate current handling up to 11 A. The TO-220/I2PAK form factor facilitates thermal management via heatsinking. Evaluate the Rds(on) and gate charge trade-offs against system efficiency targets and switching frequency constraints.
Part Context
This device belongs to the standard N-channel MOSFET lineup from Fairchild Semiconductor, which continues under the onsemi brand portfolio. It represents a legacy high-voltage discrete semiconductor solution designed for industrial and consumer power electronics markets prior to the integration of advanced SuperFET technologies.
Replacement Considerations
Direct substitutes include other 600 V, 11 A N-channel MOSFETs in I2PAK or TO-220 packages from onsemi or other manufacturers. Verify pinout compatibility and ensure equivalent or superior Rds(on), Qg, and avalanche ratings before substitution.
