ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 650V 12A POWER88
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1010 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：90W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Power88
- Package / Case：4-PowerTSFN
Download product information
Overview
The FCMT250N65S3 is a surface-mount N-channel MOSFET from the SuperFET III family, utilizing charge-balanced superjunction technology. It features a 650 V drain-source voltage rating and a continuous drain current of 12 A at case temperature. The device offers a typical on-resistance of 250 mΩ with a gate charge of 24 nC. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 90 W of power in a compact Power88 package.
Feature Summary
- SuperFET III architecture for low conduction and switching losses
- High dv/dt capability for improved system reliability
- Enhanced avalanche ruggedness with 100% testing
Applications
- Server and telecom power supplies
- Industrial power systems
- Compute and display power adapters
Procurement Notes
Verify the specific datasheet revision and ordering suffixes to ensure compatibility with your design requirements. Confirm that the component meets all relevant environmental standards such as RoHS and REACH before finalizing procurement decisions.
Selection Notes
Select this component for high-efficiency applications requiring low gate charge and fast switching speeds. The SuperFET III technology provides an optimal balance between conduction loss and switching performance, suitable for dense power designs.
Part Context
This part belongs to onsemi's SuperFET III series, which employs advanced charge-balanced superjunction MOSFET technology. This family is designed to minimize both static and dynamic losses, enabling smaller passive components and higher power densities in modern power conversion circuits.
Replacement Considerations
Check pinout compatibility and thermal characteristics when substituting. Verify that alternative parts meet or exceed the 650V rating and 250mΩ on-resistance specifications.
