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Product Detailed Parameters
- Description：MOSFET N-CH 600V 37A TO220-3
- Series：HiPerFET™, Polar™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：104mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6130 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP104N60F is an N-Channel SuperFET II FRFET MOSFET manufactured by onsemi. It features a 600V drain-source voltage rating and a continuous drain current of 37A. The device exhibits a maximum on-resistance of 104mΩ at 10V gate drive. It utilizes a TO-220-3 through-hole package with a power dissipation capacity of 357W. Operating temperatures range from -55°C to +150°C junction temperature. Key electrical characteristics include a gate charge of 145nC, threshold voltage of 5V, and ±20V gate-source voltage limits.
Feature Summary
- Integrates SuperFET II technology for optimized high-voltage performance
- Utilizes charge balance architecture to minimize conduction losses
- Provides enhanced switching speed and reduced switching energy
- Capable of withstanding extreme dv/dt ratings and avalanche stress
Applications
- AC-DC power conversion systems
- Communication and server power supplies
- Industrial power supply units
Procurement Notes
Verify the specific suffix 'F' against official datasheets to confirm packaging details and compliance status. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity. Cross-reference the part number with updated naming conventions following corporate integrations to avoid ordering errors based on legacy identifiers.
Selection Notes
Select this component for designs requiring robust high-voltage handling in compact through-hole configurations. The low on-resistance supports efficient thermal management in medium-power applications. Evaluate the gate charge requirements against driver capabilities to ensure optimal switching performance. Confirm that the TO-220-3 footprint aligns with existing board layout constraints and thermal dissipation strategies.
Part Context
This device belongs to the SuperFET II family, representing a generation of high-voltage silicon MOSFETs designed for efficiency. It succeeds earlier iterations by incorporating advanced superjunction structures. The product line targets general-purpose power electronics where reliability and low loss are critical. It serves as a standard solution for offline power converters and isolated DC-DC topologies.
Replacement Considerations
The FCH104N60F offers identical electrical specifications but utilizes a TO-247-3 package. Verify mechanical fit and thermal interface compatibility before substitution. Other variants within the same voltage class may differ significantly in current ratings or package types.
