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Product Detailed Parameters
- Description：MOSFET N-CH 600V 13A TO220-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：258mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39.5 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1765 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：116W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP13N60N is a single N-Channel power MOSFET from onsemi, utilizing SupreMOS technology. It features a 600V drain-source breakdown voltage and a continuous drain current of 13A. The device exhibits a typical on-resistance of 0.244Ω at VGS=10V and ID=6.5A, with an ultra-low gate charge of approximately 30.4nC. Packaged in TO-247 or ISOWATT218, it supports operation up to +150°C junction temperature and includes avalanche testing compliance.
Feature Summary
- SupreMOS technology for optimized high-voltage performance
- Ultra-low gate charge for efficient switching
- Low effective output capacitance
- 100% avalanche tested for ruggedness
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- DC-DC converter circuits
Procurement Notes
Verify the specific package variant (TO-247 or ISOWATT218) against design requirements. Confirm RoHS compliance status through official datasheets. Check current lifecycle status as legacy parts may have limited availability. Ensure thermal management aligns with the specified power dissipation limits.
Selection Notes
Select this component for applications requiring low gate drive losses and high voltage blocking capability. Compare Rds(on) values at relevant current levels against alternative devices. Consider the TO-247/ISOWATT218 footprint compatibility during PCB layout. Evaluate thermal resistance parameters for heatsink sizing.
Part Context
This part belongs to onsemi's SupreMOS family, designed for high-efficiency power switching. It represents a silicon-based solution distinct from SiC or GaN technologies. The FCP series typically targets general-purpose high-voltage applications requiring robust avalanche performance.
Replacement Considerations
STW13NB60 is a comparable N-Channel 600V MOSFET. Verify pinout compatibility and thermal characteristics before substitution. Other FCP series variants offer different current ratings but share similar packaging.
