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Product Detailed Parameters
- Description：MOSFET N-CH 600V 25A TO220-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3352 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：216W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP25N60N is an N-channel SupreMOS power MOSFET manufactured by onsemi. It features a 600V drain-source breakdown voltage and a continuous drain current of 25A. The device exhibits a maximum on-resistance of 125 milliohms at a gate-source voltage of 10V. It utilizes the SuperFET technology platform to optimize switching performance and conduction losses.
Feature Summary
- Integrates SuperFET technology for optimized high-voltage operation
- Provides enhanced thermal stability through advanced silicon design
- Features low gate charge characteristics for efficient switching
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- DC-DC converter circuits
Procurement Notes
Verify the specific manufacturer designation, as the FCP25N60N part number appears in documentation from multiple semiconductor entities including Diodes Incorporated. Confirm that the component matches the onsemi specification sheet regarding pinout and electrical parameters before integration into the final design.
Selection Notes
Select this component when designing circuits requiring a 600V rating with a 25A current capacity. The 125 milliohm on-resistance makes it suitable for applications prioritizing efficiency over minimal footprint. Ensure the thermal management solution supports the specified power dissipation limits under expected operating conditions.
Part Context
This device belongs to the SupreMOS family of high-voltage power transistors. It represents a generation of silicon MOSFETs designed to replace older planar technologies, offering improved ruggedness and lower switching losses compared to standard discrete MOSFETs in the same voltage class.
Replacement Considerations
The FCH25N60N from Fairchild Semiconductor serves as a direct equivalent within the same product lineage. Verify package compatibility and exact on-resistance tolerances when substituting.
