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Product Detailed Parameters
- Description：MOSFET N-CH 600V 10.2A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1665 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：106W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP380N60 is a single N-channel power MOSFET from the SuperFET II series, manufactured by onsemi. It utilizes silicon technology and charge balance superjunction architecture to achieve low conduction losses and high switching efficiency. The device features a 600V drain-source voltage rating and a continuous drain current of 10.2A at 25°C case temperature. Key electrical parameters include a maximum on-resistance of 0.33Ω at VGS=10V and a total gate charge of 30nC typical. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Employs charge balance superjunction technology for optimized performance
- Delivers low on-resistance and reduced gate charge for efficiency
- Capable of withstanding extreme dv/dt rates and high avalanche energy
Applications
- High-efficiency power supply systems
- Industrial motor control applications
- General-purpose switching circuits requiring high reliability
Procurement Notes
Verify component authenticity through authorized distribution channels due to potential counterfeit risks in the market. Confirm that the specific batch matches the datasheet specifications regarding thermal characteristics and electrical limits. Ensure proper handling procedures are followed during installation to prevent electrostatic discharge damage to the sensitive gate structure.
Selection Notes
Select this component when designing circuits that demand superior switching performance combined with robust avalanche ruggedness. The low gate charge facilitates easier driver design compared to standard planar MOSFETs. Consider the thermal management requirements associated with the TO-220 package for optimal heat dissipation during continuous operation.
Part Context
This part belongs to the SuperFET II family, representing an advancement over traditional planar technologies. The series integrates advanced superjunction structures to minimize resistive losses while maintaining high voltage blocking capabilities. It serves as a direct upgrade path for designs previously utilizing older generation 600V MOSFETs requiring improved efficiency.
Replacement Considerations
Direct substitutes may include other SuperFET II variants with similar voltage and current ratings. Verify pinout compatibility and thermal resistance values before implementation. Cross-reference absolute maximum ratings to ensure the replacement can handle the specific peak currents and voltages present in the target application.
