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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 3
- Series：SuperFET™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP4N60 is a 600V N-channel power MOSFET from Fairchild Semiconductor's SuperFET II series, housed in a TO-220 package. It features a maximum continuous drain current of 3.9A and a typical on-resistance of 1.8 ohms at 10V gate drive. The device supports a junction temperature range of -55°C to 150°C with a thermal resistance of 62°C/W. Key electrical parameters include a gate charge of 12nC and an input capacitance of 750pF.
Feature Summary
- SuperFET II technology minimizes conduction loss while providing superior switching performance.
- Designed to withstand extreme dv/dt rates and higher avalanche energy conditions.
- Optimized for low gate charge to facilitate efficient driver requirements.
Applications
- High-frequency power supply circuits
- Motor control systems
- Industrial consumer electronics
Procurement Notes
Verify component authenticity due to discontinued status. Confirm datasheet version matches specific lot requirements. Check for RoHS compliance markings on physical units. Ensure storage conditions prevent moisture damage prior to soldering.
Selection Notes
Select this component for applications requiring robust avalanche capability and high dv/dt tolerance. Evaluate thermal management needs against the 62°C/W junction-to-case resistance. Compare gate charge specifications against available driver capabilities for optimal switching efficiency.
Part Context
Part of the SuperFET II family, representing an evolution in silicon MOSFET design focused on reducing switching losses. This series bridges the gap between traditional MOSFETs and newer technologies by optimizing internal cell structures for improved reliability under harsh electrical stress.
Replacement Considerations
Check for direct equivalents from onsemi or other manufacturers offering identical pinouts and voltage ratings. Verify that substitute parts meet or exceed the 600V breakdown and 3.9A current requirements.
FAQ
What is the maximum avalanche energy rating?
Specific avalanche energy values are not provided in the general summary; consult the detailed electrical characteristics table in the official datasheet.
Is the FCP4N60 lead-free?
Fairchild Semiconductor typically produces these components in RoHS-compliant packages, but verification against the specific shipment documentation is required.
