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Product Detailed Parameters
- Description：MOSFET N-CH 600V 9A TO220-3
- Series：SuperMOS™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：385mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1240 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：83.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP9N60N is a single N-channel SupreMOS MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features a 600V drain-source breakdown voltage and a continuous drain current of 5.7A at 25°C case temperature. The device exhibits a maximum on-resistance of 330mΩ at Vgs=10V. It utilizes a TO-220-3 through-hole package with a power dissipation rating of 83.3W. Key electrical characteristics include a gate threshold voltage of 2V, a gate charge of 29nC, and an avalanche energy rating of 135mJ.
Feature Summary
- SupreMOS technology designed for low switching losses and high reliability
- Integrated body diode with fast reverse recovery characteristics
- Lead-free construction compliant with RoHS standards
Applications
- High-frequency switching power supplies
- General-purpose inverter circuits
- Motor control applications
Procurement Notes
Verify the manufacturer designation carefully, as the component was originally produced by Fairchild Semiconductor and is now managed under the onsemi brand following corporate integration. Confirm the specific ordering suffix to ensure the correct package variant and lead-free status are obtained from authorized distribution channels.
Selection Notes
Select this component for designs requiring a robust 600V N-channel switch with moderate current handling capabilities. The TO-220-3 package facilitates efficient thermal management via heatsink mounting. Evaluate the 330mΩ on-resistance against conduction loss requirements and consider the 29nC gate charge for driver capability assessment in high-speed switching environments.
Part Context
This part belongs to the SupreMOS family, representing a generation of MOSFETs optimized for improved switching performance compared to standard planar technologies. The transition from Fairchild to onsemi involves administrative changes to part numbering systems, but the underlying silicon specifications remain consistent with the original Fairchild datasheets.
