ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 11A TO220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
Download product information
Overview
The onsemi FCPF11N60F is an N-channel enhancement-mode MOSFET from the SuperFET series, utilizing charge balance technology for low conduction and switching losses. It features a 600V drain-source voltage rating and 11A continuous drain current in a TO-220AB through-hole package. Key electrical parameters include a maximum Rds(on) of 380mΩ at Vgs=10V, typical gate charge of 40nC, and ±30V gate-source voltage limits. The device operates between -55°C and +150°C with a power dissipation of 125W.
Feature Summary
- SuperFET charge balance technology reduces conduction and switching losses
- Optimized body diode reverse recovery performance minimizes external component requirements
- High avalanche energy capability ensures reliability under harsh conditions
- Low effective output capacitance supports high-frequency switching applications
Applications
- Power factor correction (PFC) circuits
- Server and telecommunications power supplies
- Flat panel television power systems
- Industrial AC-DC power converters
Procurement Notes
Verify the specific suffix 'F' indicates the Fast Recovery FRFET variant when sourcing replacements. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure thermal management design accounts for the specified power dissipation limits in the TO-220AB package to maintain junction temperature within safe operating areas during operation.
Selection Notes
Select this component for high-voltage hard-switching applications requiring efficient power conversion. The combination of low Rds(on) and fast reverse recovery makes it suitable for PFC stages. Compare against standard SuperFET versions if faster diode recovery is not critical, as the FRFET variant may carry different cost implications. Validate gate drive compatibility with the 40nC gate charge requirement.
Part Context
This part belongs to the first-generation SuperFET family developed by onsemi, formerly Fairchild Semiconductor. It represents an evolution in superjunction MOSFET technology designed to replace traditional planar devices in high-efficiency power supplies. The FCPF11N60F specifically targets applications demanding improved dv/dt rates and reduced electromagnetic interference compared to earlier generations.
Replacement Considerations
Direct substitutes include the non-fast recovery version FCPF11N60 or the standard FCP11N60F if reverse recovery speed is not required. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with SupreMOS series parts for potential upgrades in Rds(on) performance.
