FCPF1300N80Z

Overview

The FCPF1300N80Z is a single N-Channel enhancement mode MOSFET from the SuperFET II series, manufactured by onsemi. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 800 V, a continuous drain current (Id) of 4 A at case temperature limits, and a maximum gate-source voltage (Vgs) of ±20 V. The device exhibits a typical on-resistance (Rds(on)) of 1.3 Ohms and a gate charge (Qg) of 16.2 nC. It supports a power dissipation (Pd) of 24 W and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Integrates SuperFET II technology for optimized high-voltage performance
• Features low gate charge characteristics to facilitate rapid switching transitions
• Includes internal gate-source ESD protection diode for enhanced robustness

Applications

• AC-DC power supply systems
• LED lighting drivers
• Industrial power applications

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi before integration. Confirm that the TO-220-3 through-hole mounting style aligns with your PCB thermal management requirements. Ensure the 800 V rating provides sufficient margin for your circuit's peak voltage stresses. Cross-reference the pinout configuration against your schematic to prevent installation errors during assembly.

Selection Notes

Select this component when an 800 V blocking capability is required alongside moderate current handling around 4 A. The 1.3 Ohm on-resistance suits applications where conduction losses are manageable but switching efficiency remains important. Consider the TO-220-3 package if through-hole assembly is mandated or if specific mechanical retention is needed. Evaluate the thermal resistance relative to your heat sinking strategy to maintain junction temperatures within the specified operational limits.

Part Context

This part belongs to the SuperFET II family, which combines trench gate and field plate technologies to reduce switching losses. The 'FCPF' prefix typically denotes a specific package and lead-free variant within onsemi's high-voltage MOSFET lineup. This series targets general-purpose high-voltage switching applications requiring reliable performance in constrained thermal environments.

Replacement Considerations

Check for direct cross-references in onsemi's official substitution guides. Verify that any alternative maintains the 800 V Vds rating and compatible Rds(on) values. Ensure the replacement package matches the TO-220-3 footprint and pin configuration to avoid board redesign.