FCPF1300N80ZYD

$0.32

Description：MOSFET N-CH 800V 4A TO220F-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube,Tube

SKU:c1913566c38e Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 800V 4A TO220F-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：880 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：24W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3 (Y-Forming)
Package / Case：TO-220-3 Full Pack, Formed Leads

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FCPF1300N80ZYD

Overview

The FCPF1300N80ZYD is an N-Channel SuperFET II power MOSFET manufactured by onsemi. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 4 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.3 Ohms. Key switching parameters include a gate charge (Qg) of 16.2 nC, with typical rise and fall times of 8.3 ns and 6 ns, respectively. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 24 W.

Feature Summary

Integrates a body diode with low reverse recovery charge for efficient synchronous rectification.
Utilizes SuperFET II technology to minimize gate charge and switching losses.
Provides high voltage blocking capability suitable for hard-switching applications.

Applications

High-frequency switch-mode power supplies
Active clamp flyback converters
Offline AC-DC conversion stages

Procurement Notes

Verify the specific suffix 'YD' against the manufacturer's latest datasheet to confirm package forming and tape/reel specifications. Confirm RoHS compliance status and lifecycle stage, as availability may vary. Ensure thermal management design accounts for the 24 W power dissipation limit in the TO-220F package.

Selection Notes

Select this component when designing circuits requiring 800 V breakdown with moderate current handling. The low gate charge supports higher switching frequencies compared to standard MOSFETs. Evaluate thermal resistance requirements carefully due to the through-hole package constraints and specified power dissipation limits.

Part Context

This part belongs to the SuperFET II family from onsemi, designed for high-efficiency power conversion. It combines a lateral driver with a vertical MOSFET to reduce switching losses. The TO-220F package facilitates through-hole mounting for industrial and consumer power applications.

Replacement Considerations

Direct substitutes must match the 800 V rating, 1.3 Ohm Rds(on), and TO-220F package. Verify pinout compatibility and thermal characteristics before substitution.