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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF20N60FS is a single N-channel power MOSFET from onsemi's SuperFET family, designed for high-voltage applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 20A at case temperature. The device utilizes FRFET technology to achieve low switching losses and includes an integrated body diode with soft recovery characteristics. Packaged in a TO-220F-3 through-hole housing, it offers robust thermal performance for industrial and consumer power systems.
Feature Summary
- SuperFET technology optimized for high-voltage operation and fast switching
- FRFET structure providing low switching losses and reduced electromagnetic interference
- Integrated body diode with soft recovery characteristics to minimize reverse recovery effects
Applications
- High-frequency power supplies
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-to-AC inverters
Procurement Notes
Verify component status as the FCPF20N60FS may be obsolete or limited supply. Confirm availability of parametric equivalents such as the FCPF20N60 if direct sourcing is unavailable. Ensure compliance with RoHS directives and check for specific ordering suffixes that may affect packaging or electrical parameters. Validate datasheet revisions before final design integration.
Selection Notes
Select this component for designs requiring high voltage isolation and efficient switching in through-hole assemblies. Consider the thermal resistance of the TO-220F package for heat dissipation requirements. Evaluate the gate charge and output capacitance for switching frequency optimization. Ensure the application voltage and current ratings remain within the specified limits for reliable long-term operation.
Part Context
This part belongs to onsemi's SuperFET series, which combines advanced trench gate technology with optimized cell layout for superior performance. The FRFET variant specifically targets applications where switching efficiency and reduced EMI are critical. It represents a evolution in silicon power MOSFETs aimed at improving system-level efficiency in medium-power conversion stages.
Replacement Considerations
The FCPF20N60 is listed as a parametric equivalent substitute. Verify pinout compatibility and electrical parameter alignment before replacement. Check for any differences in packaging or thermal characteristics that might impact board layout and cooling strategies.
