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The Fairchild Semiconductor FCPF260N60E is an N-Channel SUPERFET II MOSFET featuring a 600 V drain-to-source voltage rating and a maximum continuous drain current of 15 A. It utilizes super-junction charge balance technology to achieve a typical on-resistance of 220 mΩ and a low total gate charge of 48 nC. The device includes an integrated gate resistor for EMI management, operates within a -55°C to +150°C temperature range, and is housed in a TO-220 Fullpack (TO-220F-3SG) package.
Verify the specific ordering suffix 'E' confirms the inclusion of the integrated gate resistor, as this distinguishes the Easy-Drive variant from standard SUPERFET II devices. Confirm the package designation matches the TO-220 Fullpack form factor required for your thermal and mechanical constraints. Ensure compliance with RoHS standards if applicable to your manufacturing process.
Select this component when application requirements demand high-voltage handling combined with controlled switching speeds to mitigate EMI. The integrated gate resistor makes it suitable for designs where external gate resistance would consume valuable board space or complicate layout. Evaluate thermal dissipation needs against the junction-to-case resistance provided in the datasheet.
This part belongs to the SUPERFET II family developed by onsemi, which acquired Fairchild Semiconductor's discrete product lines. The 'FCPF' prefix identifies the specific TO-220 Fullpack packaging variant, while the 'E' suffix denotes the Easy-Drive series configuration. This lineage ensures compatibility with established design methodologies for high-efficiency power conversion.
For faster switching applications requiring absolute minimum switching losses, consider the standard SUPERFET II series without the 'E' suffix. Verify that any substitute maintains the 600 V rating and compatible pinout configuration for direct replacement.