FCPF260N60E

FCPF260N60E

$1.49
  • Description:POWER FIELD-EFFECT TRANSISTOR, N
  • Series:SuperFET® II
  • Mfr:Fairchild Semiconductor
  • Package:Bulk

SKU:947faaebf866 Category: Brand:

  
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Product Detailed Parameters

  • Description:POWER FIELD-EFFECT TRANSISTOR, N
  • Series:SuperFET® II
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:260mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):36W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

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FCPF260N60E

Overview

The Fairchild Semiconductor FCPF260N60E is an N-Channel SUPERFET II MOSFET featuring a 600 V drain-to-source voltage rating and a maximum continuous drain current of 15 A. It utilizes super-junction charge balance technology to achieve a typical on-resistance of 220 mΩ and a low total gate charge of 48 nC. The device includes an integrated gate resistor for EMI management, operates within a -55°C to +150°C temperature range, and is housed in a TO-220 Fullpack (TO-220F-3SG) package.

Feature Summary

  • SUPERFET II super-junction architecture with charge balance technology for optimized conduction loss and switching performance
  • Integrated gate resistor designed to manage electromagnetic interference and simplify design implementation
  • 100% avalanche tested capability ensuring robustness under unclamped inductive switching conditions

Applications

  • LCD, LED, and PDP TV lighting systems
  • Solar inverters
  • AC-DC power supplies

Procurement Notes

Verify the specific ordering suffix 'E' confirms the inclusion of the integrated gate resistor, as this distinguishes the Easy-Drive variant from standard SUPERFET II devices. Confirm the package designation matches the TO-220 Fullpack form factor required for your thermal and mechanical constraints. Ensure compliance with RoHS standards if applicable to your manufacturing process.

Selection Notes

Select this component when application requirements demand high-voltage handling combined with controlled switching speeds to mitigate EMI. The integrated gate resistor makes it suitable for designs where external gate resistance would consume valuable board space or complicate layout. Evaluate thermal dissipation needs against the junction-to-case resistance provided in the datasheet.

Part Context

This part belongs to the SUPERFET II family developed by onsemi, which acquired Fairchild Semiconductor's discrete product lines. The 'FCPF' prefix identifies the specific TO-220 Fullpack packaging variant, while the 'E' suffix denotes the Easy-Drive series configuration. This lineage ensures compatibility with established design methodologies for high-efficiency power conversion.

Replacement Considerations

For faster switching applications requiring absolute minimum switching losses, consider the standard SUPERFET II series without the 'E' suffix. Verify that any substitute maintains the 600 V rating and compatible pinout configuration for direct replacement.

FCPF260N60EFCPF260N60E
$1.49
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