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Product Detailed Parameters
- Description：MOSFET N-CH 600V 15A TO220F-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：260mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF260N60E-F154 is an N-Channel SUPERFET II MOSFET featuring a 600 V drain-source voltage and a maximum continuous drain current of 15 A at 25°C. It utilizes super-junction charge balance technology to achieve a typical on-resistance of 220 mΩ and a total gate charge of 48 nC. The device operates within a junction temperature range of -55°C to +150°C, with a power dissipation rating of 36 W. It is housed in a TO-220F package.
Feature Summary
- Super-junction charge balance technology for low conduction loss
- Optimized switching performance and high avalanche energy capability
- Designed to manage EMI issues through easy drive characteristics
Applications
- Computing and display power supplies
- Telecom and server power supplies
- Industrial power supplies
- Lighting, chargers, and adapters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans. Ensure the component meets all applicable safety standards required for the intended application environment.
Selection Notes
Select this component for designs requiring high-voltage handling with efficient thermal management. Evaluate the thermal resistance values against the expected operating conditions to ensure junction temperatures remain within safe limits. Consider the gate charge requirements when designing the driver circuitry for optimal switching speeds.
Part Context
This part belongs to the SUPERFET II family from onsemi, which employs advanced super-junction architecture. This series is engineered to provide superior performance compared to traditional planar MOSFETs, offering lower on-resistance and improved switching characteristics for high-frequency power conversion applications.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.
