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Product Detailed Parameters
- Description：POWER MOSFET, N-CHANNEL, SUPERFE
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：27W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF360N65S3R0L-F154 is a SuperFET III N-channel power MOSFET manufactured by onsemi. It features a 650V drain-source voltage rating and a maximum on-resistance of 360 milliohms at a gate-source voltage of 10 volts. The device supports a continuous drain current of 10 amperes and operates within a junction temperature range of -55 to +150 degrees Celsius. Packaged in a TO-220F through-hole configuration, it utilizes silicon technology for high-voltage switching applications.
Feature Summary
- SuperFET III architecture providing low on-resistance and optimized gate charge for efficient switching
- High avalanche energy capability with 100% avalanche testing for enhanced reliability
- Through-hole TO-220F package design suitable for robust thermal management
Applications
- High-frequency power conversion systems
- Industrial motor control drives
- Automotive power supply circuits
Procurement Notes
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer datasheet before integration. Ensure the component meets all absolute maximum ratings for your target operating environment.
Selection Notes
Select this component when a 650V rating and low conduction losses are required in a through-hole package. Compare total gate charge and output capacitance against alternative packages to evaluate switching performance. Verify that the thermal resistance characteristics align with the system's heat dissipation requirements.
Part Context
This part belongs to the SuperFET III family, which employs charge balance technology to achieve superior performance compared to previous generations. The series is designed to reduce both conduction and switching losses, enabling smaller passive components and higher overall system efficiency in power electronics designs.
Replacement Considerations
Check the FCMT360N65S3 for surface-mount compatibility or the FCD360N65S3R0 for DPAK alternatives. Verify pinout and electrical parameters match exactly before substitution.
