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Product Detailed Parameters
- Description：POWER SUPERFET MOSFET N-CHANNEL
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：465 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：24W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF600N65S3R0L-F154 is an N-channel power MOSFET from the SUPERFET III series by onsemi. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 12 A. The device utilizes super-junction technology to achieve a low on-resistance of 250 mΩ. Packaged in a TO-220 through-hole housing with three pins, it supports operation between -55°C and +150°C junction temperature. Key electrical characteristics include a typical gate charge of 24 nC and a power dissipation capacity of 39 W.
Feature Summary
- Super-junction architecture for optimized conduction and switching performance
- Easy Drive design capability to assist in managing electromagnetic interference
- High avalanche energy tolerance verified through testing
Applications
- Computing and display power supplies
- Telecom and server power supplies
- Industrial power supply systems
- Lighting, chargers, and adapters
Procurement Notes
Verify the specific suffix L1 against the original R0 designation when sourcing replacements, as package or lead variations may exist. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the TO-220 footprint matches the target PCB layout requirements before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high-voltage handling with moderate current capabilities. The 250 mΩ on-resistance offers a balance between efficiency and cost. Consider the thermal management needs associated with the 39 W power dissipation rating in the TO-220 package for reliable long-term operation.
Part Context
This part belongs to the SUPERFET III family, which employs charge balance technology to minimize on-resistance and gate charge. The series is engineered for high-voltage applications, providing superior switching performance compared to traditional planar MOSFETs while maintaining robustness against extreme dv/dt rates.
Replacement Considerations
The FCPF250N65S3L1-F154 is a documented variant within the same product line. Verify pinout compatibility and exact parameter alignment before substitution.
