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Product Detailed Parameters
- Description：IGBT MOD 1700V 650A 3150W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：Single Chopper
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：650 A
- Power - Max：3150 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：27 nF @ 25 V
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Overview
The FD401R17KF6C_B2 is a 1700 V IGBT module featuring a second-generation low-loss IGBT and a soft Emitter Controlled Diode. It provides a continuous DC collector current of 400 A at TC = 80°C, with a repetitive peak collector current of 800 A. The module includes an integrated brake-chopper IGBT and diode, alongside a reverse diode. Key electrical parameters include a maximum collector-emitter voltage of 1700 V, a typical VCE(sat) of 3.10 V at 400 A and 125°C, and a total power dissipation of 3.15 kW. Thermal resistance from junction to case is 40.0 K/kW for the IGBT and 68.0 K/kW for the diodes.
Feature Summary
- Integrates a second-generation low-loss IGBT with soft Emitter Controlled Diode technology.
- Includes dedicated brake-chopper IGBT and diode components within the single module.
- Features internal isolation using Aluminum Nitride (AlN) substrate.
- Provides high short-circuit capability with a maximum short-circuit current of 1600 A.
Applications
- Brake chopper circuits in industrial drives
- High-power traction applications
- Industrial motor control systems
Procurement Notes
Verify the specific ordering suffix _B2 against official Infineon documentation to confirm package and qualification details. Ensure that the preliminary data status does not impact final design specifications. Confirm thermal interface material requirements match the specified RthCH values. Validate mounting torque specifications for M5 and M6 screws during assembly.
Selection Notes
Select this module for applications requiring 1700 V blocking capability and up to 400 A continuous current. Consider the 58 nH stray inductance for switching speed optimization. Evaluate the thermal resistance values against the expected heatsink performance. Verify compatibility with standard gate drive voltages of ±15 V.
Part Context
This component belongs to the Infineon IGBT module family, specifically designed for high-power industrial and traction applications. It utilizes advanced chip technology to minimize switching losses while maintaining robust short-circuit withstand capability. The module integrates multiple semiconductor functions into a single compact housing.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure replacement parts maintain identical voltage ratings, current capabilities, and pin configurations. Verify thermal and mechanical compatibility before implementation.
FAQ
What is the maximum short-circuit current rating?
The module supports a maximum short-circuit current of 1600 A for pulse durations up to 10 µs at Tvj = 125°C.
What is the isolation test voltage?
The isolation test voltage is 4.0 kV RMS at 50 Hz for one minute.
What is the typical turn-on energy loss?
At IC = 400 A, VCE = 900 V, and Tvj = 25°C, the typical turn-on energy loss (Eon) is 190 mJ.
