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Product Detailed Parameters
- Description：IGBT MODULE 1700V 800A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Single Chopper
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：5200 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：72 nF @ 25 V
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Overview
The FD800R17KE3B2NOSA1 is a chopper IGBT module utilizing Trenchstop IGBT3-E3 technology. It features an IHM package with dimensions of 130 mm by 140 mm and weighs 1050 g. The collector-emitter voltage (VCES) is rated at 1700 V, while the continuous DC collector current (IC nom) reaches 800 A at TC = 80°C. The typical collector-emitter saturation voltage (VCE sat) is 2.00 V at Tvj = 25°C. The diode forward voltage (VF) is typically 1.55 V at Tvj = 25°C. Total power dissipation is 5.20 kW at TC = 25°C.
Feature Summary
- Incorporates Trenchstop IGBT3-E3 technology for optimized switching performance.
- Features an enlarged diode configuration to support high-current braking chopper applications.
- Utilizes an AlSiC baseplate material for improved thermal management and mechanical stability.
Applications
- Industrial traction systems
- Brake chopper circuits
- High-power industrial motor drives
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified channels. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with relevant safety standards and application notes provided by the manufacturer before integration into final equipment designs.
Selection Notes
Evaluate thermal resistance values against system cooling requirements. Consider gate resistor selection to manage switching losses and electromagnetic interference. Verify isolation voltage ratings match the electrical environment. Assess short-circuit withstand capability for protection circuit design.
Part Context
This component belongs to the Infineon IGBT3-E3 family, designed for robust industrial applications. It represents a high-power discrete solution within the company's portfolio of silicon-based power modules. The module integrates both IGBT and diode chips in a single housing for compact system implementation.
Replacement Considerations
FD1200R17KE3-K
FAQ
What is the maximum repetitive peak reverse voltage for the integrated diode?
The repetitive peak reverse voltage (VRRM) for the diode is rated at 1700 V at a junction temperature of 25°C.
What is the internal gate resistance value?
The internal gate resistance (RGint) is typically 1.9 Ω at a junction temperature of 25°C.
What is the recommended mounting torque for M6 screws?
The mounting torque for M6 screws should be between 4.25 Nm and 5.75 Nm, according to valid application notes.
