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Product Detailed Parameters
- Description：IGBT MODULE 3300V 9600W
- Series：IHM-A
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：Single Chopper
- Vce(on) (Max) @ Vge, Ic：4.25V @ 15V, 800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：-
- Power - Max：9600 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：100 nF @ 25 V
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Overview
The FD800R33KF2CKNOSA1 is a single IGBT module from Infineon’s IGBT2 series, utilizing silicon technology. It features a collector-emitter maximum voltage of 3.3 kV and a continuous collector current of 1.3 kA at 25°C. The device has a collector-emitter saturation voltage of 3.4 V and a power dissipation rating of 9.6 kW. It operates within a temperature range of -40°C to +125°C and uses an IHM package with screw mount installation.
Feature Summary
- High-voltage capability rated at 3.3 kV for robust power switching
- High current handling with 1.3 kA continuous collector current
- Automotive-grade design suitable for demanding thermal environments
Applications
- Electric vehicle traction inverters
- Industrial motor drives
- High-power renewable energy systems
Procurement Notes
Verify component authenticity through authorized channels due to the critical nature of automotive-grade power modules. Confirm that the specific suffix KNOSA1 matches the required automotive qualification standards. Check for obsolescence notices or lifecycle changes directly from Infineon, as availability may be restricted. Ensure storage conditions comply with moisture sensitivity levels specified in the official datasheet to prevent degradation before assembly.
Selection Notes
Select this module when applications require high voltage blocking up to 3.3 kV combined with substantial current capacity. The IHM package facilitates efficient thermal management via screw mounting. Consider the 125°C junction temperature limit for system design. Evaluate gate drive requirements against the 20 V maximum gate-emitter voltage specification. Ensure the PCB or baseplate layout supports the physical dimensions and terminal configuration of the IHM housing.
Part Context
This component belongs to the Infineon IGBT2 family, designed for high-efficiency power conversion. It represents a silicon-based solution optimized for industrial and automotive sectors. The module integrates fast-recovery diodes alongside IGBTs in a single compact unit. This series emphasizes reliability and low switching losses for high-power density applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult Infineon directly for potential next-generation replacements or cross-reference similar specifications in the IGBT2 portfolio.
