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FDMA410NZT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 20V 9.5A 6MICROFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDMA410NZT
- Description：MOSFET N-CH 20V 9.5A 6MICROFET
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：23mOhm @ 9.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1310 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-UDFN (2.05x2.05)
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for FDMA410NZT
Single FETs, MOSFETs Overview
The FDMA410NZT is an N-Channel MOSFET from onsemi's PowerTrench series, utilizing a 20 V drain-source voltage (BVDSS) and a maximum continuous drain current of 9.5 A at 25°C. It features an ultra-thin MicroFET package with a maximum height of 0.55 mm. The device offers low on-resistance values, specifically 23 mΩ at VGS = 4.5 V and 60 mΩ at VGS = 1.5 V. Total gate charge is typically 10 nC at VGS = 4.5 V. Operating junction temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Ultra-thin 0.55 mm max package height in a 2 x 2 mm footprint
- Optimized RDS(on) for low-voltage drive applications down to 1.5 V
- High ESD protection level exceeding 1.5 kV via HBM standard
Single FETs, MOSFETs Applications
- Li-ion Battery Pack management
- Baseband Switch circuits
- Load Switch implementations
- DC-DC Conversion systems
- Mobile Device Switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'T' indicates tape and reel packaging containing 3000 units per reel. Confirm compliance with RoHS standards and Pb-free/Halogen-free material requirements during procurement. Ensure the selected variant matches the required pin orientation specifications for the MicroFET package.
Single FETs, MOSFETs Selection Notes
Select this component when board space constraints require an ultra-thin profile under 0.55 mm. Choose based on the need for efficient switching at low gate voltages, particularly around 1.5 V or 1.8 V. Consider the thermal resistance characteristics relative to the copper pad area available on the PCB layout.
Single FETs, MOSFETs Part Context
This part belongs to the FDMA410 family of single N-Channel MOSFETs. It shares similar electrical characteristics with the FDMA410NZ but utilizes advanced 0.55 mm max package technology. The device is manufactured using onsemi's Power Trench process to optimize performance metrics.
Single FETs, MOSFETs Replacement Considerations
FDMA410NZ serves as a comparable alternative within the same product family, differing primarily in package height specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
