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FDN338P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is 20V 1.6A 500MW [email protected],1.6A 1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDN338P
- Description：20V 1.6A 500MW [email protected],1.6A 1
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：112mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：405 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for FDN338P
Single FETs, MOSFETs Overview
The UMW FDN338P is a P-channel MOSFET housed in a SOT-23 package. It features a drain-source voltage of -20V and a continuous drain current of -2.8A at 25°C. The device exhibits an on-state resistance of 112mΩ at VGS=-4.5V and ID=-2.8A, or 142mΩ at VGS=-2.5V and ID=-2.0A. Maximum power dissipation is 0.4W with a junction temperature rating of 150°C. Gate-source voltage limits are ±8V.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET technology for enhanced switching performance
- Capable of low-voltage drive operation at 2.5V gate-source levels
- Integrates a body diode for synchronous rectification applications
Single FETs, MOSFETs Applications
- Load switch for portable devices
- DC/DC converter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific manufacturer marking code (FDN338) against the datasheet to confirm authenticity. Ensure the component matches the SOT-23 physical dimensions and pinout configuration: Pin 1 is Gate, Pin 2 is Source, and Pin 3 is Drain. Confirm RoHS compliance status through official documentation before integration into production.
Single FETs, MOSFETs Selection Notes
Select this component when a compact P-channel solution is required for low-voltage logic control. The low threshold voltage allows direct interfacing with standard microcontrollers. Evaluate thermal constraints carefully due to the limited power dissipation capability inherent to the small surface-mount package size.
Single FETs, MOSFETs Part Context
This part belongs to the UMW plastic-encapsulated MOSFET series designed for general-purpose switching. It serves as a discrete semiconductor alternative to integrated load switches. The SOT-23 form factor provides space efficiency for dense printed circuit board layouts in consumer electronics.
Single FETs, MOSFETs Replacement Considerations
Cross-reference pinouts and electrical ratings with other P-channel SOT-23 MOSFETs. Verify that substitute components meet the same -20V breakdown and current handling requirements.
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