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Product Detailed Parameters
- Description：IGBT MODULE 1200V 5000W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 1200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Power - Max：5000 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：86 nF @ 25 V
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Overview
The FF1200R12KE3NOSA1 is a single IGBT module from Infineon Technologies, rated for 1200 V collector-emitter voltage and 1200 A continuous collector current. It features a maximum power dissipation of 3900 W and an on-state collector-emitter saturation voltage of 2.15 V at 800 A with a 15 V gate drive. The input capacitance is specified as 57 nF at 25 V. Designed for base mounting in a module package, it operates within a junction temperature range of -40°C to 125°C.
Feature Summary
- Single-chip configuration for high-current power switching applications
- Trenchstop technology optimized for low conduction losses
- Robust thermal management capability up to 3900 W dissipation
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to the critical nature of power semiconductor reliability. Confirm that the specific ordering suffix matches the required technical specifications, as variations may exist within the product family. Ensure storage conditions comply with moisture sensitivity level requirements to prevent damage prior to soldering.
Selection Notes
Select this module when a single-phase leg requires high current handling capacity exceeding 1000 A. Evaluate thermal interface material compatibility and mounting torque specifications to ensure optimal heat transfer from the baseplate. Consider the gate charge characteristics for driver selection to achieve desired switching speeds while managing electromagnetic interference.
Part Context
This component belongs to the Trenchstop IGBT3 series, representing a generation of silicon modules designed for industrial efficiency. It serves as a core switching element in medium-to-high power conversion circuits. The part number indicates specific packaging and testing standards defined by Infineon for industrial grade reliability.
Replacement Considerations
The FF900R12IE4BOSA1 is identified as a similar replacement option. Note that this substitute offers a reduced current rating of 900 A compared to the original 1200 A specification. Verify that the lower current capacity meets the application's peak load requirements before implementation.
