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The FF225R65T3E3P3BPMA1 is an XHP™3 IGBT module featuring Trench/Fieldstop IGBT3 technology and emitter-controlled diodes. It provides a collector-emitter voltage (VCES) of 6500 V at 125°C and a continuous DC collector current (ICDC) of 225 A at TC=80°C. The device supports a repetitive peak collector current (ICRM) of 450 A. Key electrical parameters include a typical saturation voltage (VCEsat) of 3.40 V at 25°C and 4.20 V at 125°C, with a forward voltage (VF) of 3.55 V for the diode. Thermal resistance from junction to case is 29.1 K/kW for the IGBT and 51.3 K/kW for the diode.
Verify the specific ordering suffix P3BPMA1 against the official Infineon datasheet to confirm mechanical and packaging details. Ensure compliance with export regulations if applicable. Confirm that the component meets the required industrial qualification standards defined in IEC 60747, 60749, and 60068 before integration into final designs.
Select this module for high-voltage applications requiring 6500 V blocking capability. Consider the thermal resistance values and mounting torque specifications (M6 screws, 4.25–5.75 Nm) for heatsink interface design. Verify gate drive requirements, specifically the ±20 V peak gate-emitter voltage limit and internal gate resistor value of 0.67 Ω.
This component belongs to the XHP™3 series from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology. It is part of a portfolio designed for high-power industrial applications, offering enhanced insulation and thermal performance compared to previous generations.
Consult the official Infineon replacement guide or datasheet revision history for confirmed substitute part numbers. Do not assume cross-compatibility with other voltage classes or package types without verifying pinout and thermal characteristics.