FF450R17ME4B11BOSA1

Overview

The FF450R17ME4B11BOSA1 is a half-bridge IGBT module from Infineon's EconoDUAL™3 series, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (ICDC) of 450 A at a case temperature of 100 °C. The maximum repetitive peak collector current (ICRM) reaches 900 A. The module incorporates an emitter-controlled diode with a forward voltage (VF) of 1.8 V typ at 25 °C. Electrical characteristics include a saturation voltage (VCE,sat) of 1.95 V typ at 25 °C and a gate threshold voltage (VGEth) ranging from 5.20 V to 6.40 V. Thermal resistance from junction to case is 0.06 K/W for the IGBT and 0.10 K/W for the diode. An integrated NTC thermistor provides thermal monitoring.

Feature Summary

• PressFIT contact technology enables solderless mounting and reliable connection to PCBs or busbars.
• Integrated NTC thermistor allows for real-time internal temperature monitoring.
• Emitter-controlled diode design optimizes switching performance and reduces reverse recovery losses.
• Qualified for industrial applications in accordance with IEC 60747, 60749, and 60068 standards.

Applications

• Motor drives
• Servo drives
• UPS systems
• Wind turbines

Procurement Notes

Verify the complete part number including the BOSA1 suffix against official Infineon documentation to ensure correct configuration. Confirm that the application environment meets the specified insulation coordination requirements, including the 3.4 kV isolation test voltage. Ensure mounting procedures strictly follow the manufacturer's application notes regarding torque specifications and thermal interface material application to maintain rated performance.

Selection Notes

Select this component for high-power industrial applications requiring robust 1700 V blocking capability and 450 A continuous current handling. The PressFIT termination method is suitable for designs prioritizing assembly reliability and vibration resistance over traditional screw mounting. Evaluate the thermal resistance values and operating temperature range (-40 °C to 150 °C) against the specific heat sink and cooling system capabilities of the target equipment.

Part Context

This module belongs to the EconoDUAL™3 family, designed for compact power conversion systems. It utilizes silicon-based Trench/Fieldstop IGBT4 technology combined with emitter-controlled diodes. The standard housing facilitates integration into various industrial power electronics architectures, providing a balance between electrical performance and mechanical durability for demanding operational environments.

Replacement Considerations

Direct replacements within the same series include the FF450R17ME4_B11 variant. Verify compatibility by comparing pinout configurations, thermal resistance parameters, and mechanical dimensions. Ensure that any substitute part maintains equivalent voltage ratings and current capacities to preserve system safety margins and performance characteristics.

FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current (ICRM) is 900 A, limited by the maximum junction temperature.

What is the typical forward voltage of the integrated diode?

The typical forward voltage (VF) of the emitter-controlled diode is 1.80 V at a junction temperature of 25 °C and a forward current of 450 A.

How is the module terminated?

The module uses PressFIT contact technology, allowing for solderless mounting onto printed circuit boards or busbars.