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The FF600R12ME4BOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 600 A at a case temperature of 100 °C. The module incorporates an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C. Electrical characteristics include a typical collector-emitter saturation voltage of 1.75 V and a forward voltage of 1.65 V for the emitter-controlled diode at 25 °C. The unit weighs 345 g and operates within a junction temperature range of -40 °C to 150 °C.
Verify the specific BOSA1 suffix against official documentation to confirm terminal configuration and packaging details. Confirm that the component meets all relevant safety and insulation requirements for the intended industrial application environment before integration.
Select this module for applications requiring robust 1200 V switching capabilities with integrated thermal sensing. Ensure the cooling system can maintain the case temperature at or below 100 °C to support the full 600 A continuous current rating effectively.
This component belongs to the EconoDUAL™3 series, which utilizes standard housing dimensions for simplified mechanical integration. The module is manufactured using silicon technology and is specifically engineered for industrial-grade reliability and high power density in demanding environments.
Consult official replacement lists for updated generations such as the IGBT7 series. Verify pin compatibility and thermal resistance specifications when considering alternative part numbers from the same manufacturer family.
The maximum operating junction temperature (Tvj op) is 150 °C.
Yes, it includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C.
The isolation test voltage between terminals and the baseplate is 2.5 kV RMS for 1 minute.