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The FF900R12IE4BOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It features a PrimePACK™2 housing with screw mounting and integrated NTC thermistor. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, continuous DC collector current (IC nom) of 900 A at TC=100°C, and repetitive peak collector current (ICRM) of 1800 A. The typical collector-emitter saturation voltage (VCEsat) is 2.05 V at Tvj=125°C. Total power dissipation is 5.1 kW at TC=25°C. Operating junction temperature ranges from -40°C to 150°C.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm compliance with RoHS directives and REACH regulations. Ensure that the procurement channel provides valid traceability data matching the module serial number and date code printed on the component label.
Select this module for applications requiring high power density and robust thermal cycling capability. Verify that the gate drive circuitry supports the specified internal gate resistance and peak voltage limits. Confirm that the cooling system can maintain the case temperature within the rated limits to ensure the 900 A continuous current rating is met.
This component belongs to the Trenchstop IGBT4 - E4 series within the PrimePACK™2 family. It is designed as a half-bridge configuration suitable for industrial and traction inverter applications. The module integrates both the IGBT switch and the anti-parallel diode in a single compact package.
FF900R12IE4P
The maximum repetitive peak collector current (ICRM) is 1800 A for a pulse duration of 1 ms.
Yes, the module includes an integrated NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C.
The isolation test voltage (VISOL) is 4.0 kV RMS at 50 Hz for 1 minute.