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The FF900R12ME7WBPSA1 is an EconoDUAL™3 IGBT module featuring TRENCHSTOP™ IGBT7 technology. It provides a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 890 A at 25°C case temperature, with a repetitive peak current capability of 1800 A. The integrated emitter-controlled diode supports a forward current of 900 A. Electrical characteristics include a typical saturation voltage of 1.5 V and a reverse recovery energy of 29 mJ at 25°C. The module incorporates an NTC thermistor with a rated resistance of 5 kΩ for thermal monitoring.
Verify the specific suffix 'BPSA1' against official Infineon documentation to confirm mechanical termination type and compliance status. Ensure that the selected gate driver matches the internal gate resistor specifications. Confirm that the application environment adheres to the industrial qualification standards defined in the datasheet.
Select this component for designs requiring high current handling and robust short-circuit withstand capabilities up to 1800 A. Evaluate the thermal resistance values relative to the intended cooling fluid flow rate. Consider the positive temperature coefficient of the saturation voltage for parallel operation stability.
This module belongs to the EconoDUAL™3 product family, which supports voltage classes from 600 V to 1700 V. It represents the integration of advanced silicon IGBT technology into a standardized package format widely used in industrial power electronics. The series emphasizes reliability and ease of integration for medium-to-high power conversion tasks.
Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may differ in thermal impedance or pinout compatibility.
The module supports an operating junction temperature range from -40 °C to 175 °C.
An integrated NTC thermistor is included, providing a rated resistance of 5 kΩ at 25 °C.
The module exhibits a low stray inductance of 20 nH between the collector and emitter terminals.