FF900R12ME7WBPSA1

FF900R12ME7WBPSA1

$197.42
  • Description:FF900R12ME7WBPSA1
  • Series:-

SKU:b71da08c0448 Category: Brand:

  
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Product Detailed Parameters

  • Description:FF900R12ME7WBPSA1
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Type:-
  • Configuration:-
  • Current:-
  • Voltage:-
  • Voltage - Isolation:-
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FF900R12ME7WBPSA1

Overview

The FF900R12ME7WBPSA1 is an EconoDUAL™3 IGBT module featuring TRENCHSTOP™ IGBT7 technology. It provides a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 890 A at 25°C case temperature, with a repetitive peak current capability of 1800 A. The integrated emitter-controlled diode supports a forward current of 900 A. Electrical characteristics include a typical saturation voltage of 1.5 V and a reverse recovery energy of 29 mJ at 25°C. The module incorporates an NTC thermistor with a rated resistance of 5 kΩ for thermal monitoring.

Feature Summary

  • Utilizes TRENCHSTOP™ IGBT7 technology to achieve high power density and optimized switching performance.
  • Features an isolated copper base plate designed for direct cooling applications.
  • Includes an integrated NTC thermistor for precise internal temperature sensing.
  • Constructed with solder contact technology within a standard housing configuration.

Applications

  • High-power converters
  • Motor drives
  • Straight servo drives
  • Uninterruptible Power Supply (UPS) systems
  • Commercial agriculture vehicles

Procurement Notes

Verify the specific suffix 'BPSA1' against official Infineon documentation to confirm mechanical termination type and compliance status. Ensure that the selected gate driver matches the internal gate resistor specifications. Confirm that the application environment adheres to the industrial qualification standards defined in the datasheet.

Selection Notes

Select this component for designs requiring high current handling and robust short-circuit withstand capabilities up to 1800 A. Evaluate the thermal resistance values relative to the intended cooling fluid flow rate. Consider the positive temperature coefficient of the saturation voltage for parallel operation stability.

Part Context

This module belongs to the EconoDUAL™3 product family, which supports voltage classes from 600 V to 1700 V. It represents the integration of advanced silicon IGBT technology into a standardized package format widely used in industrial power electronics. The series emphasizes reliability and ease of integration for medium-to-high power conversion tasks.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may differ in thermal impedance or pinout compatibility.

FAQ

What is the maximum operating junction temperature?

The module supports an operating junction temperature range from -40 °C to 175 °C.

How is the internal temperature monitored?

An integrated NTC thermistor is included, providing a rated resistance of 5 kΩ at 25 °C.

What is the stray inductance of the module?

The module exhibits a low stray inductance of 20 nH between the collector and emitter terminals.

FF900R12ME7WBPSA1FF900R12ME7WBPSA1
$197.42
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