Diode Arrays FFAF20U120DNTU product image

FFAF20U120DNTU

$1.99
  • Description:DIODE ARRAY GP 1200V 20A TO-3PF
  • Series:-

SKU:e0058b638653 Category: Brand:

  
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FFAF20U120DNTU is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 1200V 20A TO-3PF. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FFAF20U120DNTU

  • Description:DIODE ARRAY GP 1200V 20A TO-3PF
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:3.5 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):120 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 1200 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3 Full Pack
  • Supplier Device Package:TO-3PF
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FFAF20U120DNTU

FFAF20U120DNTU

Diode Arrays Overview

The FFAF20U120DNTU is a dual common cathode ultrafast recovery power rectifier manufactured by onsemi. It features a 1200 V peak repetitive reverse voltage and a 20 A average rectified forward current rating at a case temperature of 100 °C. The device utilizes a TO-3PF through-hole package with a maximum thermal resistance from junction to case of 0.84 °C/W. Key electrical characteristics include a maximum instantaneous forward voltage of 3.5 V at 20 A, a maximum reverse recovery time of 120 ns, and a non-repetitive peak surge current capability of 120 A.

Diode Arrays Feature Summary

  • Dual common cathode configuration for efficient circuit integration
  • Ultrafast recovery characteristics suitable for high-speed switching applications
  • High voltage and high reliability design
  • Low forward voltage drop for improved efficiency

Diode Arrays Applications

  • Switching mode power supplies
  • Free-wheeling diodes for motor applications
  • Power switching circuits
  • General purpose rectification

Diode Arrays Procurement Notes

Verify the specific manufacturer origin, as the datasheet indicates Fairchild Semiconductor International while the part number suffix suggests an onsemi product. Confirm RoHS compliance status directly with the supplier or official documentation. Ensure the component matches the TO-3PF package dimensions and pinout (Anode-Cathode-Anode) required for your PCB layout. Check for any obsolescence notices or lifecycle changes associated with this specific revision.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities up to 1200 V combined with fast switching speeds. The 20 A current rating makes it suitable for medium-power applications. Consider the thermal management requirements given the 0.84 °C/W junction-to-case resistance. The TO-3PF package allows for direct mounting to heatsinks, facilitating effective heat dissipation in high-current scenarios compared to smaller surface-mount packages.

Diode Arrays Part Context

This component belongs to the FFAF series of ultrafast recovery power rectifiers originally developed by Fairchild Semiconductor. The series is characterized by high voltage ratings and fast reverse recovery times, designed to minimize switching losses in high-frequency power conversion topologies. The transition to onsemi has maintained the technical specifications defined in the original Fairchild datasheets.

Diode Arrays Replacement Considerations

FFAF10U120DN TU

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction and storage temperature range is -65 °C to +150 °C.

How does the forward voltage change with temperature?

The maximum instantaneous forward voltage decreases as temperature increases; it is specified as 3.5 V max at 25 °C and 3.2 V max at 100 °C for a forward current of 20 A.

What is the avalanche energy rating?

The device has a rated avalanche energy of 1.0 mJ.

FFAF20U120DNTUFFAF20U120DNTU
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