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The FFB2907A is a PNP multi-chip general-purpose amplifier manufactured by onsemi, originally from Fairchild Semiconductor. It integrates four discrete transistors into an SC70-6 surface-mount package. The device supports collector currents up to 500 mA and withstands collector-emitter voltages of -60 V. Key electrical parameters include a DC current gain (hFE) ranging from 50 to 300 at -150 mA, a transition frequency (fT) of 250 MHz, and a total device power dissipation of 300 mW. Thermal resistance from junction to ambient is specified at 415 °C/W.
Verify the manufacturer origin carefully, as the datasheet originates from Fairchild Semiconductor while the brand is listed as onsemi due to corporate acquisition. Confirm the specific package variant matches the required footprint, as equivalent part numbers like FMB2907A utilize different packages such as SuperSOT-6 or SOIC-16. Ensure ordering suffixes align with tape and reel specifications if automated assembly is planned.
Select the FFB2907A when a multi-transistor solution is required in a minimal footprint. Compare thermal resistance values against available PCB copper area, as the SC70-6 package has a higher junction-to-ambient resistance compared to larger packages. Consider alternative packages like MMPQ2907A if higher power dissipation capabilities are necessary for the application.
This component belongs to the FFB/FMB/MMPQ2907A family of PNP multi-chip amplifiers. While functionally identical regarding internal transistor characteristics, the variants differ strictly in physical packaging: FFB uses SC70-6, FMB uses SuperSOT-6, and MMPQ uses SOIC-16. They share the same internal block diagram and electrical performance metrics.
Direct pin-compatible replacements include FMB2907A (SuperSOT-6) and MMPQ2907A (SOIC-16), provided the mechanical footprint allows. Verify that any substitute maintains the -60V breakdown voltage and 500mA current rating.
The total device power dissipation for the FFB2907A in the SC70-6 package is 300 mW at 25°C ambient temperature.
The device contains four independent PNP transistors configured as a multi-chip module.
The transition frequency is typically 250 MHz when measured at IC = -50 mA and VCE = -20 V.