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The FFB5551 is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It integrates two independent NPN transistors within a single surface-mount package, specifically the SC-88 (SC-70-6) or SOT-363 outline. The device supports a maximum collector-emitter voltage of 160V and a continuous collector current of 200mA. Key electrical characteristics include a transition frequency of 300MHz and a DC current gain (hFE) minimum of 80 at 10mA and 5V. The component operates with a maximum power dissipation of 200mW and functions across a junction temperature range of -55°C to 150°C.
Verify component status as obsolete through official manufacturer channels before integration. Confirm availability of qualified replacement parts such as MMDT5551-TP or MMDT5551-7-F if supply continuity is required. Ensure compliance with RoHS3 standards and check for any recent Product Change Notices regarding marking or packaging updates.
Select this component when a dual NPN configuration is required in a minimal footprint. Verify that the 160V breakdown voltage and 200mA current limits meet circuit demands. Consider thermal management for the 200mW power dissipation limit in the small SC-88 package. Ensure compatibility with surface-mount assembly processes.
The FFB5551 belongs to the FFB55 series of dual NPN transistor arrays from onsemi. It serves as a discrete solution for replacing multiple individual transistors in compact designs. The part is historically associated with Fairchild Semiconductor technology prior to corporate restructuring. It is distinct from single-transistor variants within the same family.
Publicly confirmed direct substitutes include MMDT5551-TP by Micro Commercial Components and MMDT5551-7-F by Diodes Incorporated. These alternatives offer parameter equivalence. Verify pinout compatibility and package dimensions before substitution.