FFB5551

FFB5551

$0.67
  • Description:TRANS 2NPN 160V 200MA SC-88
  • Series:-

SKU:10718dbbae44 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 160V 200MA SC-88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):160V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Power - Max:200mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:-
  • Qualification:-

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FFB5551

Overview

The FFB5551 is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It integrates two independent NPN transistors within a single surface-mount package, specifically the SC-88 (SC-70-6) or SOT-363 outline. The device supports a maximum collector-emitter voltage of 160V and a continuous collector current of 200mA. Key electrical characteristics include a transition frequency of 300MHz and a DC current gain (hFE) minimum of 80 at 10mA and 5V. The component operates with a maximum power dissipation of 200mW and functions across a junction temperature range of -55°C to 150°C.

Feature Summary

  • Dual configuration integrating two independent NPN transistors for space-efficient circuit design
  • High voltage capability suitable for general-purpose amplification applications
  • Surface-mount construction in a compact SC-88 package

Applications

  • General-purpose signal amplification circuits
  • Switching applications requiring dual NPN logic
  • Consumer electronics internal signal processing

Procurement Notes

Verify component status as obsolete through official manufacturer channels before integration. Confirm availability of qualified replacement parts such as MMDT5551-TP or MMDT5551-7-F if supply continuity is required. Ensure compliance with RoHS3 standards and check for any recent Product Change Notices regarding marking or packaging updates.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. Verify that the 160V breakdown voltage and 200mA current limits meet circuit demands. Consider thermal management for the 200mW power dissipation limit in the small SC-88 package. Ensure compatibility with surface-mount assembly processes.

Part Context

The FFB5551 belongs to the FFB55 series of dual NPN transistor arrays from onsemi. It serves as a discrete solution for replacing multiple individual transistors in compact designs. The part is historically associated with Fairchild Semiconductor technology prior to corporate restructuring. It is distinct from single-transistor variants within the same family.

Replacement Considerations

Publicly confirmed direct substitutes include MMDT5551-TP by Micro Commercial Components and MMDT5551-7-F by Diodes Incorporated. These alternatives offer parameter equivalence. Verify pinout compatibility and package dimensions before substitution.

FFB5551FFB5551
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