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FFSH2065BDN-F085 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SIC 650V TO247-3. Review the specifications below when checking this part for your BOM.
The onsemi FFSH2065BDN-F085 is a silicon carbide Schottky diode from the EliteSiC series, designed for high-efficiency power conversion. It features a 650 V repetitive reverse voltage and a 20 A continuous forward current rating in a TO-247 package. Key electrical parameters include a maximum forward voltage of 2.4 V at 20 A and a peak reverse current of 160 μA. The device supports a non-repetitive surge current of 42 A and operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix F085 against official datasheets to confirm pinout and packaging details. Ensure compatibility with AEC-Q101 automotive standards if required for the target application. Cross-reference thermal resistance values with system heatsinking capabilities to maintain junction temperatures within specified limits during operation.
Select this component for applications requiring low reverse recovery charge and high-temperature stability. Compare the 2.4 V forward voltage drop against alternative packages like TO-263 or PQFN to balance conduction losses with board space constraints. Evaluate the 42 A surge capability against potential inrush currents in the specific circuit design.
This part belongs to onsemi's EliteSiC family of silicon carbide Schottky rectifiers. These devices are engineered to replace traditional silicon fast recovery diodes, offering superior efficiency and higher operating frequencies. The FFSH2065BDN variant specifically targets through-hole mounting requirements for industrial and automotive power electronics.
Direct substitutes may include other 650V 20A SiC Schottky diodes in TO-247 packages from onsemi, such as the FFSH2065B without the F085 suffix, provided pinouts match. Verify equivalent thermal and electrical specifications before substitution.
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