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FFSH4065BDN is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SIC 650V 20A TO247-3. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for FFSH4065BDN
- Description：DIODE ARRAY SIC 650V 20A TO247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io) (per Diode)：20A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：40 µA @ 650 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for FFSH4065BDN
Diode Arrays Overview
The FFSH4065BDN is a dual common cathode Silicon Carbide (SiC) Schottky diode from onsemi, housed in a TO-247-3LD package. It features a peak repetitive reverse voltage of 650 V and a continuous forward current rating of 40 A per device (20 A per leg). The component supports a maximum junction temperature of 175°C and offers an avalanche energy rating of 94 mJ. Electrical characteristics include a typical forward voltage of 1.38 V at 20 A and 25°C, with a maximum reverse leakage current of 40 µA at 650 V.
Diode Arrays Feature Summary
- Dual common cathode configuration for efficient power switching
- Zero reverse recovery current for reduced switching losses
- Positive temperature coefficient facilitating easy paralleling
- Avalanche rated capability for robust operation
Diode Arrays Applications
- Switching Mode Power Supplies (SMPS)
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
Diode Arrays Procurement Notes
Verify the specific ordering suffix to confirm shipping format, as the datasheet indicates this part ships in tubes of 30 units. Ensure the procurement documentation matches the exact part number FFSH4065BDN/D to guarantee compliance with RoHS standards and lead-free material composition requirements specified by the manufacturer.
Diode Arrays Selection Notes
Select this component for high-frequency applications requiring superior thermal performance compared to silicon devices. Consider the 40 A total current capacity and 650 V blocking voltage when designing circuits. Evaluate the thermal resistance parameters against your heatsinking strategy to ensure the junction temperature remains within the 175°C limit under expected operating loads.
Diode Arrays Part Context
This device belongs to onsemi's EliteSiC series of Silicon Carbide Schottky Diodes. These components utilize advanced SiC technology to deliver higher reliability and faster switching speeds than traditional silicon alternatives. The series is designed to increase system efficiency, reduce electromagnetic interference, and allow for smaller system sizes in modern power electronics.
Diode Arrays Replacement Considerations
Consult official cross-reference lists or distributor databases for verified substitutes. Do not assume functional equivalence based solely on voltage and current ratings due to potential differences in thermal characteristics and package dimensions.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.
