FFSP2065B-F085

Single Diodes Overview

The FFSP2065B-F085 is a Silicon Carbide (SiC) Schottky diode from the EliteSiC series, packaged in a TO-220-2LD (D2) configuration. It features a peak repetitive reverse voltage of 650 V and a continuous rectified forward current of 20 A at a case temperature below 141°C. The device supports a maximum junction temperature of 175°C and includes avalanche rating capability with single pulse energy up to 94 mJ. Electrical characteristics include a typical forward voltage of 1.38 V at 20 A and 25°C, and a maximum reverse current of 40 µA at 650 V.

Single Diodes Feature Summary

• No reverse recovery or forward recovery characteristics for improved switching performance
• Positive temperature coefficient facilitating ease of paralleling
• Temperature independent switching characteristics
• High surge current capacity

Single Diodes Applications

• Automotive HEV-EV Onboard Chargers
• Automotive HEV-EV DC-DC Converters

Single Diodes Procurement Notes

Verify the specific ordering suffix F085 against official documentation to confirm packing method details, as standard tubes are listed for this part number. Ensure compliance requirements such as RoHS and Pb-Free status match project specifications. Confirm that the TO-220-2LD package dimensions align with the target PCB layout constraints before finalizing procurement.

Single Diodes Selection Notes

Select this component when high efficiency and reduced system size are required due to faster operating frequencies. Consider the 175°C max junction temperature for thermal management designs. Verify that the 94 mJ avalanche rating meets the circuit's unclamped inductive switching requirements. Ensure the 20 A continuous current rating accommodates the application's peak loads under specified case temperatures.

Single Diodes Part Context

This device belongs to onsemi's EliteSiC family of silicon carbide power semiconductors. It utilizes advanced SiC technology to offer superior reliability and switching performance compared to traditional silicon diodes. The product is designed to increase power density and reduce electromagnetic interference in high-power applications.

Single Diodes Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference electrical parameters such as VRRM, IF, and package type when evaluating alternatives.