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Product Detailed Parameters
- Description：IGBT TRENCH FS 1100V 50A TO-3PN
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1100 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 50A
- Power - Max：300 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：195 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
Download product information
Overview
The FGA50S110P is a shorted-anode Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, now part of onsemi. This component is rated for a collector-emitter voltage of 1100 V and a continuous collector current of 50 A. It utilizes a shorted-anode structure to enhance switching performance and robustness in high-power applications.
Feature Summary
- Shorted-anode IGBT architecture designed for improved switching characteristics
- High voltage rating suitable for demanding power electronics environments
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify the obsolete status and discontinuation notice from official onsemi documentation before procurement planning. Confirm availability through authorized distributors as production has ceased. Ensure compatibility with existing thermal management and gate drive circuits. Request final lot testing data if required for critical reliability standards. Validate that the package type matches the design constraints.
Selection Notes
Select this component for applications requiring 1100 V blocking capability and 50 A current handling. The shorted-anode design offers specific trade-offs between conduction loss and switching speed compared to standard IGBTs. Evaluate thermal resistance parameters against the system's heat sink capabilities. Consider the device's saturation voltage characteristics for efficiency calculations in the target circuit topology.
Part Context
This IGBT belongs to the FGA series of shorted-anode devices from Fairchild Semiconductor. These components are engineered for medium to high-power industrial applications. The series typically features robust short-circuit withstand capability and optimized turn-off behavior. The FGA50S110P represents a specific current and voltage combination within this product line.
Replacement Considerations
As the part is obsolete, verify cross-reference options such as the FGA25S125P for similar structural families, though current ratings differ. Check for newer generations of shorted-anode IGBTs from onsemi or other manufacturers. Ensure pinout and thermal interface dimensions match the original footprint to avoid PCB redesign.
