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The onsemi FGD4536TM_SN00306 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing trench technology, designed for Plasma Display Panel (PDP) applications. It features a maximum collector-emitter voltage (VCEO) of 360 V and a continuous collector current of 50 A at 25°C. The device exhibits a low saturation voltage of 1.59 V at the rated current. Key electrical parameters include a gate-emitter voltage range of -20 V to +20 V, a power dissipation capability of 125 W, and a gate-emitter leakage current of 400 nA. It is housed in a DPAK-3 (TO-252-3) surface-mount package.
Verify component authenticity through authorized channels as this part number may be subject to obsolescence or discontinuation notices from the manufacturer. Confirm RoHS compliance status via official datasheets before integration. Ensure supply chain stability due to potential end-of-life constraints associated with legacy PDP technologies.
Select this component for designs requiring robust 360 V blocking capability with high current handling in compact surface-mount formats. Evaluate thermal management strategies carefully given the 125 W power dissipation rating in a TO-252-3 package. Verify that the 1.59 V saturation voltage meets efficiency targets for the specific load conditions.
This IGBT belongs to the FGD series developed for consumer electronics, specifically targeting the PDP market where efficiency and thermal performance are critical. Originally introduced by Fairchild Semiconductor, the product line was integrated into onsemi's portfolio following corporate acquisitions. The device represents a mature technology node optimized for cost-effective mass production in display drivers.
Direct pin-compatible substitutes within the same family include the FGD4536. Other comparable 360V PDP IGBTs from different manufacturers may require schematic review due to variations in switching characteristics and thermal resistance.