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Product Detailed Parameters
- Description：IGBT 600V 75A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
- Power - Max：290 W
- Switching Energy：115µJ (on), 195µJ (off)
- Input Type：Standard
- Gate Charge：35 nC
- Td (on/off) @ 25°C：8ns/35ns
- Test Condition：390V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr)：48 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The FGH40N6S2D is a 600V, SMPS II Series N-Channel IGBT with an integrated Anti-Parallel Stealth Diode. It features low gate charge (35nC typ at VGE=15V) and low plateau voltage (6.5V typ). The device supports continuous collector currents of 75A at TC=25°C and 35A at TC=110°C. Maximum ratings include a pulsed collector current of 180A and total power dissipation of 290W at 25°C case temperature. Switching characteristics include a typical fall time of 85ns at TJ=125°C and UIS capability rated at 260mJ. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- SMPS II technology combining fast switching speed with low gate charge and plateau voltage for reduced gate drive power requirements.
- Integrated Anti-Parallel Stealth Diode providing optimized reverse recovery characteristics suitable for high-frequency applications.
- Unclamped Inductive Switching (UIS) rated capability ensuring robustness against avalanche events in inductive loads.
Applications
- Power Factor Correction (PFC) circuits
- Full bridge and half bridge topologies
- Push-Pull circuits
- Uninterruptible power supplies (UPS)
- Zero voltage and zero current switching circuits
Procurement Notes
Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor while onsemi acquired Fairchild. Confirm the specific revision (RevA3) matches design requirements. Ensure handling precautions for electrostatic discharge are followed during assembly. Check RoHS compliance status if required by local regulations. Validate thermal resistance parameters against the specific mounting conditions used in the final application.
Selection Notes
Select this component for high-voltage switched mode power supply applications requiring low conduction loss and fast switching times. Consider the 600V breakdown voltage and 75A continuous current rating for appropriate load margins. Evaluate the thermal management needs based on the 290W power dissipation limit and junction-to-case thermal resistance. Ensure the gate drive circuit can accommodate the 35nC gate charge and 6.5V plateau voltage for optimal performance.
Part Context
The FGH40N6S2D belongs to the SMPS II series of Insulated Gate Bipolar Transistors. It integrates an N-Channel IGBT with an Anti-Parallel Stealth Diode in a single TO-247 package. This co-packaged configuration simplifies circuit design by eliminating the need for external freewheeling diodes in many topologies. The device is designed to offer improved efficiency and reliability compared to standard IGBTs in high-frequency power conversion systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing footprints and electrical specifications before considering alternative components from other manufacturers or different product lines.
