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The FGH40T120SMDL4 is a Field Stop Trench IGBT manufactured by onsemi, designed for hard switching applications. It features a TO-247-4LD package with separate Kelvin and power emitters. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC) of 40 A at 100°C. The saturation voltage (VCE(sat)) is typically 1.8 V at IC = 40 A and VGE = 15 V. Maximum power dissipation is 555 W at 25°C case temperature. Switching losses are specified as Eon = 2.24 mJ and Eoff = 1.02 mJ under standard test conditions.
Verify the specific ordering suffix L4 to confirm the inclusion of the Kelvin emitter configuration. Ensure that the procurement documentation matches the exact part number FGH40T120SMDL4/D to avoid confusion with similar variants lacking the dedicated gate drive pin. Confirm RoHS compliance status through official manufacturer channels.
Select this component when high-voltage isolation and low conduction losses are required in hard switching environments. The TO-247-4LD package facilitates effective thermal management and precise gate control via the Kelvin emitter. Evaluate thermal resistance characteristics against the specific heatsink design to ensure junction temperatures remain within the -55°C to +175°C operating range during peak loads.
This device belongs to onsemi's field stop trench IGBT series, which utilizes advanced silicon technology to optimize performance for industrial power electronics. The specific L4 designation indicates the physical layout includes four leads, separating the gate drive return from the main power return to minimize noise coupling during high-speed switching operations.
Direct substitutes must match the 1200V rating, 40A current capacity, and TO-247-4LD package. Verify that alternative components also feature a Kelvin emitter pin if noise immunity is critical. Cross-reference switching energy values and thermal resistance specifications to ensure equivalent circuit performance.