ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT FIELD STOP 650V 80A TO247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.81V @ 15V, 40A
- Power - Max：268 W
- Switching Energy：1.22mJ (on), 440µJ (off)
- Input Type：Standard
- Gate Charge：68 nC
- Td (on/off) @ 25°C：18ns/64ns
- Test Condition：400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr)：101 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The onsemi FGH40T65SHDF-F155 is a P-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the Field Stop Trench technology series. It features a maximum continuous collector current of 80 A and a collector-emitter voltage rating of 650 V. The device is housed in a TO-247 package with three pins for through-hole mounting. Key electrical parameters include a maximum power dissipation of 268 W, a collector-emitter saturation voltage of 1.9 V, and a gate-emitter voltage range of ±20 V. It operates within a temperature range from -55 °C to +175 °C.
Feature Summary
- Utilizes Field Stop Trench technology for optimized switching performance.
- Designed for high-temperature operation up to 175 °C junction temperature.
- Features low saturation voltage characteristics for reduced conduction losses.
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheets. Confirm RoHS compliance status via the specific manufacturing batch documentation. Ensure the TO-247 footprint matches the target PCB design requirements before finalizing procurement orders.
Selection Notes
Select this component for applications requiring robust 650 V blocking capability and high current handling. Compare the 1.9 V saturation voltage against system thermal constraints. Verify that the ±20 V gate drive limits align with the control circuitry specifications to ensure reliable switching operations.
Part Context
This IGBT belongs to the FGH series utilizing Field Stop Trench technology. It serves as a high-power switching element designed for industrial and commercial power conversion systems. The component integrates advanced trench gate architecture to improve efficiency compared to standard planar designs.
Replacement Considerations
Direct substitutes may include other 650 V, 80 A IGBTs in TO-247 packages from the same manufacturer family. Verify pinout compatibility and thermal resistance values when considering alternative part numbers for board-level replacements.
