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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 50A
- Power - Max：341 W
- Switching Energy：510µJ (on), 880µJ (off)
- Input Type：Standard
- Gate Charge：509 nC
- Td (on/off) @ 25°C：31ns/408ns
- Test Condition：400V, 25A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：75 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGHL50T65LQDT is a Field Stop Trench IGBT rated at 650 V and 50 A, utilizing 4th generation Low VCE(Sat) technology. It features a co-packaged soft and fast recovery diode in a TO-247-3L package. Key electrical parameters include a maximum collector-emitter voltage (VCES) of 650 V, a continuous collector current (IC) of 80 A at TC = 25°C, and a typical saturation voltage (VCE(Sat)) of 1.15 V at IC = 50 A. The device supports a maximum junction temperature (TJ) of 175°C and offers a thermal resistance junction-to-case of 0.44 °C/W for the IGBT.
Feature Summary
- Field stop 4th generation Low VCE(Sat) IGBT technology
- Full current rated copak Diode technology
- Positive Temperature Co-efficient for easy parallel operation
- Smooth and optimized switching with tight parameter distribution
Applications
- Solar Inverter
- UPS, ESS
- PFC, Converters
Procurement Notes
Verify the specific ordering suffix to confirm the exact packaging configuration, as standard tubes contain 450 units. Confirm RoHS compliance and Pb-free status through official documentation before procurement. Ensure the component meets all automotive or industrial qualification requirements if applicable to the target design environment.
Selection Notes
Select this component for applications requiring low conduction losses and high current capability within a 650 V rating. The positive temperature coefficient facilitates reliable parallel operation without complex current balancing circuits. Evaluate the thermal impedance characteristics against the system's heat dissipation capabilities to ensure the junction temperature remains within the 175°C limit under peak load conditions.
Part Context
This part belongs to onsemi's FS4 series of Field Stop Trench IGBTs. It represents an evolution in power semiconductor design focused on reducing switching and conduction losses. The integration of a full-current rated diode simplifies module design by eliminating the need for external freewheeling diodes in many topologies.
Replacement Considerations
Direct replacements must match the 650 V / 50 A rating, TO-247-3L package, and similar VCE(Sat) specifications. Verify that any substitute maintains comparable switching energy values and reverse recovery characteristics to ensure circuit stability.
