SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FGPF70N30TRDTU is a Single Power Module (SPM) manufactured by Fairchild Semiconductor, belonging to the SPM3 series. It integrates a PNP IGBT with an anti-parallel diode in a TO-220-3 FP package for through-hole mounting. The device supports a collector-emitter voltage of 300V and a continuous collector current of 70A. It operates within a junction temperature range of -55°C to +150°C and features a maximum power dissipation of 219W at case temperature.
Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm that the specific suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives and check for any relevant process change notifications affecting material composition or manufacturing origin before finalizing procurement.
Select this component when a P-channel switching solution is required for high-current applications. Verify that the 300V rating aligns with the system's DC bus voltage. Ensure the thermal management design can handle the 219W dissipation limit. Compare gate charge requirements against the available driver capability to ensure adequate switching speed without excessive losses.
This part belongs to the SPM3 family of integrated power modules from Fairchild Semiconductor. These modules are designed to simplify circuit design by combining complementary switches. The FGPF70N30TRDTU specifically addresses the need for PNP switching in bridge configurations where NPN devices are standard.
Consider the FGP30N30TDTU for lower current requirements or the FGP70N60S for higher voltage ratings. Verify pinout compatibility and thermal characteristics before substituting. Check datasheets for differences in saturation voltage and switching times to ensure circuit stability.